Investigation of optical gain in Eu-doped GaN thin film grown by OMVPE method
We prepare and optically characterize a thin film of GaN:Eu. Room temperature intense emission band at around 620 nm is observed, corresponding to 5D0 → 7F2 electronic dipole transition of Eu3+ ions in the GaN host material. At lower temperatures, three components, at 621, 622, and 623 nm, arising f...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2016-06-01
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| Series: | Journal of Science: Advanced Materials and Devices |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S246821791630048X |