Research on the Gate Oxide Layer Aging Trend of Power Electronic Device

The introduction of fully electric vehicles (FEVs) into the mainstream has raised concerns about the reliability of their electronic components such as Insulated Gate Bipolar Translator (IGBT). At present, only the transient thermal resistance curve in the datasheet and the initial thermal model of...

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Bibliographic Details
Main Authors: Guoqing Xu, Lingfeng Shao, Weiwei Wei, Yanhui Zhang, Xuecheng Sun
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9363891/