Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

Emerging non-volatile memories based on resistive switching mechanisms attract intense R&D efforts from both academia and industry. Oxide-based Resistive Random Acces Memories (OxRAM) gather noteworthy performances, such as fast write/read speed, low power and high endurance outperforming th...

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Bibliographic Details
Main Authors: Marc Bocquet, Hassen Aziza, Weisheng Zhao, Yue Zhang, Santhosh Onkaraiah, Christophe Muller, Marina Reyboz, Damien Deleruyelle, Fabien Clermidy, Jean-Michel Portal
Format: Article
Language:English
Published: MDPI AG 2014-01-01
Series:Journal of Low Power Electronics and Applications
Subjects:
Online Access:http://www.mdpi.com/2079-9268/4/1/1