Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors

Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors

The characterization of total ionizing dose (TID) damage in COTS pinned photodiode (PPD) CMOS image sensors (CISs) is investigated. The radiation experiments are carried out at a 60Co γ-ray source. The CISs are produced by 0.18-μm CMOS technology and the pixel architecture is 8T global shutter pixel...

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Bibliographic Details
Main Authors:	Zujun Wang, Wuying Ma, Shaoyan Huang, Zhibin Yao, Minbo Liu, Baoping He, Jing Liu, Jiangkun Sheng, Yuan Xue
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2016-03-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.4943674

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