Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors
The characterization of total ionizing dose (TID) damage in COTS pinned photodiode (PPD) CMOS image sensors (CISs) is investigated. The radiation experiments are carried out at a 60Co γ-ray source. The CISs are produced by 0.18-μm CMOS technology and the pixel architecture is 8T global shutter pixel...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4943674 |