Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors

Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors

The characterization of total ionizing dose (TID) damage in COTS pinned photodiode (PPD) CMOS image sensors (CISs) is investigated. The radiation experiments are carried out at a 60Co γ-ray source. The CISs are produced by 0.18-μm CMOS technology and the pixel architecture is 8T global shutter pixel...

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Main Authors: Zujun Wang, Wuying Ma, Shaoyan Huang, Zhibin Yao, Minbo Liu, Baoping He, Jing Liu, Jiangkun Sheng, Yuan Xue
Format: Article
Language:English
Published: AIP Publishing LLC 2016-03-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4943674
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spelling doaj-c886345366194371893a1e042c922a802020-11-24T22:25:24ZengAIP Publishing LLCAIP Advances2158-32262016-03-0163035205035205-1010.1063/1.4943674019603ADVCharacterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensorsZujun Wang0Wuying Ma1Shaoyan Huang2Zhibin Yao3Minbo Liu4Baoping He5Jing Liu6Jiangkun Sheng7Yuan Xue8State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an, Shaanxi 710024, ChinaState Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an, Shaanxi 710024, ChinaState Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an, Shaanxi 710024, ChinaState Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an, Shaanxi 710024, ChinaState Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an, Shaanxi 710024, ChinaState Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an, Shaanxi 710024, ChinaSchool of Materials Science and Engineering, Xiangtan University, Hunan, ChinaState Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an, Shaanxi 710024, ChinaState Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an, Shaanxi 710024, ChinaThe characterization of total ionizing dose (TID) damage in COTS pinned photodiode (PPD) CMOS image sensors (CISs) is investigated. The radiation experiments are carried out at a 60Co γ-ray source. The CISs are produced by 0.18-μm CMOS technology and the pixel architecture is 8T global shutter pixel with correlated double sampling (CDS) based on a 4T PPD front end. The parameters of CISs such as temporal domain, spatial domain, and spectral domain are measured at the CIS test system as the EMVA 1288 standard before and after irradiation. The dark current, random noise, dark signal non-uniformity (DSNU), photo response non-uniformity (PRNU), overall system gain, saturation output, dynamic range (DR), signal to noise ratio (SNR), quantum efficiency (QE), and responsivity versus the TID are reported. The behaviors of the tested CISs show remarkable degradations after radiation. The degradation mechanisms of CISs induced by TID damage are also analyzed.http://dx.doi.org/10.1063/1.4943674
collection DOAJ
language English
format Article
sources DOAJ
author Zujun Wang
Wuying Ma
Shaoyan Huang
Zhibin Yao
Minbo Liu
Baoping He
Jing Liu
Jiangkun Sheng
Yuan Xue
spellingShingle Zujun Wang
Wuying Ma
Shaoyan Huang
Zhibin Yao
Minbo Liu
Baoping He
Jing Liu
Jiangkun Sheng
Yuan Xue
Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors
AIP Advances
author_facet Zujun Wang
Wuying Ma
Shaoyan Huang
Zhibin Yao
Minbo Liu
Baoping He
Jing Liu
Jiangkun Sheng
Yuan Xue
author_sort Zujun Wang
title Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors
title_short Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors
title_full Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors
title_fullStr Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors
title_full_unstemmed Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors
title_sort characterization of total ionizing dose damage in cots pinned photodiode cmos image sensors
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2016-03-01
description The characterization of total ionizing dose (TID) damage in COTS pinned photodiode (PPD) CMOS image sensors (CISs) is investigated. The radiation experiments are carried out at a 60Co γ-ray source. The CISs are produced by 0.18-μm CMOS technology and the pixel architecture is 8T global shutter pixel with correlated double sampling (CDS) based on a 4T PPD front end. The parameters of CISs such as temporal domain, spatial domain, and spectral domain are measured at the CIS test system as the EMVA 1288 standard before and after irradiation. The dark current, random noise, dark signal non-uniformity (DSNU), photo response non-uniformity (PRNU), overall system gain, saturation output, dynamic range (DR), signal to noise ratio (SNR), quantum efficiency (QE), and responsivity versus the TID are reported. The behaviors of the tested CISs show remarkable degradations after radiation. The degradation mechanisms of CISs induced by TID damage are also analyzed.
url http://dx.doi.org/10.1063/1.4943674
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AT wuyingma characterizationoftotalionizingdosedamageincotspinnedphotodiodecmosimagesensors
AT shaoyanhuang characterizationoftotalionizingdosedamageincotspinnedphotodiodecmosimagesensors
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AT jingliu characterizationoftotalionizingdosedamageincotspinnedphotodiodecmosimagesensors
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