Magnetoresistance of Ultralow-Hole-Density Monolayer Epitaxial Graphene Grown on SiC
Silicon carbide (SiC) has already found useful applications in high-power electronic devices and light-emitting diodes (LEDs). Interestingly, SiC is a suitable substrate for growing monolayer epitaxial graphene and GaN-based devices. Therefore, it provides the opportunity for integration of high-pow...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-08-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/12/17/2696 |