Graded-Gap Technology Formatting of High-Speed GaAs – Transistor Structures as the Basis for Modern of Large Integrated Circuits
<span>Reducing the size of silicon devices is accompanied by an increase in the effective rate of electrons, decrease transit time and the transition to a ballistic work. Power consumption is reduced too. Formation of large integrated circuits structures on Si-homotransition reduces their freq...
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| Format: | Article |
| Language: | English |
| Published: |
Vasyl Stefanyk Precarpathian National University
2016-03-01
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| Series: | Фізика і хімія твердого тіла |
| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/739 |