Observation of fluctuation-induced tunneling conduction in micrometer-sized tunnel junctions
Micrometer-sized Al/AlOx/Y tunnel junctions were fabricated by the electron-beam lithography technique. The thin (≈ 1.5–2 nm thickness) insulating AlOx layer was grown on top of the Al base electrode by O2 glow discharge. The zero-bias conductances G(T) and the current-voltage characteristics of the...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2012-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4749251 |