Relationship between transport properties and band diagrams in InAsxSb1−x/Al0.1In0.9Sb quantum wells
The resistivity of InAs0.1Sb0.9/Al0.1In0.9Sb quantum wells (QWs) is much lower than that of InSb/Al0.1In0.9Sb QWs, staying low resistivity even at low temperature. Fundamental difference in low temperature transport properties between InSb/Al0.1In0.9Sb and InAs0.1Sb0.9/Al0.1In0.9Sb QWs was revealed,...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-06-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4923192 |