Dynamic characteristics after bias stress of GaN HEMTs with field plate on free‐standing GaN substrate
Abstract This paper investigates the electron trapping behaviour after bias stress in GaN high‐electron‐mobility transistors (HEMTs) fabricated on GaN substrate. On‐resistance (RON) and electron‐trap‐induced threshold voltage shift (ΔVth) of GaN HEMTs on GaN substrate are determined by gate quiescen...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-07-01
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| Series: | Electronics Letters |
| Online Access: | https://doi.org/10.1049/ell2.12201 |