Directly Writing Patterning of Conductive Material by High Voltage Induced Weak Electric Arc Machining (HV-μEAM)
An additive manufacturing (AM) method for the deposition of metallic layer in micron scale on monocrystalline silicon wafer surface by high voltage induced weak electric arc machining (HV-μEAM) has been proposed. The process characteristics of HV-μEAM are analyzed to fulfil the met...
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doaj-c67a6d20d3ab4c85bfdc54472a31e7942020-11-25T01:34:01ZengMDPI AGCoatings2079-64122019-08-019953810.3390/coatings9090538coatings9090538Directly Writing Patterning of Conductive Material by High Voltage Induced Weak Electric Arc Machining (HV-μEAM)Zilong Peng0Tianming Feng1Zilong Wei2Yong Zhang3Yinan Li4Shandong Engineering Research Center for Additive Manufacturing, Qingdao University of Technology, Qingdao 266520, ChinaShandong Engineering Research Center for Additive Manufacturing, Qingdao University of Technology, Qingdao 266520, ChinaShandong Engineering Research Center for Additive Manufacturing, Qingdao University of Technology, Qingdao 266520, ChinaShandong Engineering Research Center for Additive Manufacturing, Qingdao University of Technology, Qingdao 266520, ChinaShandong Engineering Research Center for Additive Manufacturing, Qingdao University of Technology, Qingdao 266520, ChinaAn additive manufacturing (AM) method for the deposition of metallic layer in micron scale on monocrystalline silicon wafer surface by high voltage induced weak electric arc machining (HV-μEAM) has been proposed. The process characteristics of HV-μEAM are analyzed to fulfil the metal material deposition. The influence of the processing parameters on the deposition effect were studied with copper as additive electrode material. Using the optimal parameters, a number of complex trajectory deposition experiments have been carried out and a QD character-type deposition layer with a height of 139.09 μm has been obtained. The deposition has good continuity and high forming precision. It is proven that the new method is achievable and efficient for patterning metallic materials in the micro- and nano-scale on the silicon substrates surface.https://www.mdpi.com/2079-6412/9/9/538high voltage inductionarc dischargedepositionmicron scalemetallic layer |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Zilong Peng Tianming Feng Zilong Wei Yong Zhang Yinan Li |
spellingShingle |
Zilong Peng Tianming Feng Zilong Wei Yong Zhang Yinan Li Directly Writing Patterning of Conductive Material by High Voltage Induced Weak Electric Arc Machining (HV-μEAM) Coatings high voltage induction arc discharge deposition micron scale metallic layer |
author_facet |
Zilong Peng Tianming Feng Zilong Wei Yong Zhang Yinan Li |
author_sort |
Zilong Peng |
title |
Directly Writing Patterning of Conductive Material by High Voltage Induced Weak Electric Arc Machining (HV-μEAM) |
title_short |
Directly Writing Patterning of Conductive Material by High Voltage Induced Weak Electric Arc Machining (HV-μEAM) |
title_full |
Directly Writing Patterning of Conductive Material by High Voltage Induced Weak Electric Arc Machining (HV-μEAM) |
title_fullStr |
Directly Writing Patterning of Conductive Material by High Voltage Induced Weak Electric Arc Machining (HV-μEAM) |
title_full_unstemmed |
Directly Writing Patterning of Conductive Material by High Voltage Induced Weak Electric Arc Machining (HV-μEAM) |
title_sort |
directly writing patterning of conductive material by high voltage induced weak electric arc machining (hv-μeam) |
publisher |
MDPI AG |
series |
Coatings |
issn |
2079-6412 |
publishDate |
2019-08-01 |
description |
An additive manufacturing (AM) method for the deposition of metallic layer in micron scale on monocrystalline silicon wafer surface by high voltage induced weak electric arc machining (HV-μEAM) has been proposed. The process characteristics of HV-μEAM are analyzed to fulfil the metal material deposition. The influence of the processing parameters on the deposition effect were studied with copper as additive electrode material. Using the optimal parameters, a number of complex trajectory deposition experiments have been carried out and a QD character-type deposition layer with a height of 139.09 μm has been obtained. The deposition has good continuity and high forming precision. It is proven that the new method is achievable and efficient for patterning metallic materials in the micro- and nano-scale on the silicon substrates surface. |
topic |
high voltage induction arc discharge deposition micron scale metallic layer |
url |
https://www.mdpi.com/2079-6412/9/9/538 |
work_keys_str_mv |
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1725074175767347200 |