Nucleation Control in Physical Vapor Transport Growth of AlN Single Crystals on Polycrystal Tungsten Substrates

Nucleation Control in Physical Vapor Transport Growth of AlN Single Crystals on Polycrystal Tungsten Substrates

The improved resistively-heated furnace with two heaters established a vertical thermal gradient to control nucleation during AlN single crystals Physical Vapor Transport (PVT) growth on polycrystal tungsten substrates. During the high temperature (> 1850 °C) heating process, the reverse temperat...

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Bibliographic Details
Main Authors: Honglei WU, Zuoyan QIN, Xueyong TIAN, Zhenhua SUN, Baikui LI, Ruisheng ZHENG, Ke WANG
Format: Article
Language:English
Published: Kaunas University of Technology 2019-12-01
Series:Medžiagotyra
Subjects:
growth from vapor
single-crystal growth
nitrides
x-ray diffraction
Online Access:http://matsc.ktu.lt/index.php/MatSc/article/view/21575

Internet

http://matsc.ktu.lt/index.php/MatSc/article/view/21575

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