Effect of thermal annealing on carrier localization and efficiency of spin detection in GaAsSb epilayers grown on InP
The effect of the thermal annealing on the optical and spin properties in GaAs0.44Sb0.56 epilayers grown on InP was investigated via photoreflectance, power-dependent and time-resolved photoluminescence spectroscopy as well as optical orientation measurement. The carrier’s localization and the optic...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5027803 |