InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D

InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D

In this paper, the InGaAs junctionless (JL) FinFET with notable electrical performance is demonstrated. The device with <i>W</i><sub>fin</sub> down to 20 nm, EOT of 2.1 nm, and <i>L</i><sub>G</sub> = 60 nm shows high <i>I</i><sub>ON&l...

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Bibliographic Details
Main Authors: Po-Chun Chang, Chih-Jen Hsiao, Franky Juanda Lumbantoruan, Chia-Hsun Wu, Yen-Ku Lin, Yueh-Chin Lin, Simon M. Sze, Edward Yi Chang
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Junctionless (JL) transistor
InGaAs nMOSFETs
FinFET
high-k dielectric
Ni-InGaAs
metal source/drain
Online Access:https://ieeexplore.ieee.org/document/8419250/
Description
Summary:In this paper, the InGaAs junctionless (JL) FinFET with notable electrical performance is demonstrated. The device with <i>W</i><sub>fin</sub> down to 20 nm, EOT of 2.1 nm, and <i>L</i><sub>G</sub> = 60 nm shows high <i>I</i><sub>ON</sub> = 188 &#x03BC;A/&#x03BC;m at <i>V</i><sub>DD</sub> = 0.5 V and <i>I</i><sub>OFF</sub> = 100 nA/&#x03BC;m, <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> = 5 &#x00D7; 10<sup>5</sup>, DIBL = 106 mV/V and SS = 96 mV/dec. The device also exhibits a decent extrinsic transconductance (<i>G</i><sub>m</sub>) of 1142 &#x03BC;S/&#x03BC;m at <i>V</i><sub>DS</sub> of 0.5 V. This high performance is attributed to the moderate doping concentration to ensure the channel carriers could be effectively depleted and the low <i>R</i><sub>SD</sub> realized by self-aligned Ni-InGaAs alloy S/D. Furthermore, we also examine the temperature dependence of the main electrical parameters of the JL transistor.
ISSN:2168-6734

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