InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D

InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D

In this paper, the InGaAs junctionless (JL) FinFET with notable electrical performance is demonstrated. The device with <i>W</i><sub>fin</sub> down to 20 nm, EOT of 2.1 nm, and <i>L</i><sub>G</sub> = 60 nm shows high <i>I</i><sub>ON&l...

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Bibliographic Details
Main Authors: Po-Chun Chang, Chih-Jen Hsiao, Franky Juanda Lumbantoruan, Chia-Hsun Wu, Yen-Ku Lin, Yueh-Chin Lin, Simon M. Sze, Edward Yi Chang
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Junctionless (JL) transistor
InGaAs nMOSFETs
FinFET
high-k dielectric
Ni-InGaAs
metal source/drain
Online Access:https://ieeexplore.ieee.org/document/8419250/

Internet

https://ieeexplore.ieee.org/document/8419250/

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