A JL-SDR-IMPATT Device with Improved Efficiency
Abstract An attempt has been made to present a new device which will function as a highly efficient SDR (Single Drift Region) P+-N- N+ IMPATT diode utilizing the advantages of a junctionless field effect transistor. The basic idea is to convert a uniform N+ region into a (P+-N-N+) structure without...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Sociedade Brasileira de Microondas e Optoeletrônica; Sociedade Brasileira de Eletromagnetismo
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| Series: | Journal of Microwaves, Optoelectronics and Electromagnetic Applications |
| Subjects: | |
| Online Access: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S2179-10742017000200323&lng=en&tlng=en |