Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

We investigated the influence of low-concentration indium (In) doping on the chemical and structural properties of solution-processed zinc oxide (ZnO) films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry and differential...

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Bibliographic Details
Main Authors: Xue Zhang, Hyeonju Lee, Jung-Hyok Kwon, Eui-Jik Kim, Jaehoon Park
Format: Article
Language:English
Published: MDPI AG 2017-07-01
Series:Materials
Subjects:
oxide semiconductor
sol-gel precursor
solution process
doping
transistor
Online Access:https://www.mdpi.com/1996-1944/10/8/880

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https://www.mdpi.com/1996-1944/10/8/880

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