Enable a Facile Size Re-distribution of MBE-Grown Ga-Droplets via In Situ Pulsed Laser Shooting

Enable a Facile Size Re-distribution of MBE-Grown Ga-Droplets via In Situ Pulsed Laser Shooting

Abstract A MBE-prepared Gallium (Ga)-droplet surface on GaAs (001) substrate is in situ irradiated by a single shot of UV pulsed laser. It demonstrates that laser shooting can facilely re-adjust the size of Ga-droplet and a special Ga-droplet of extremely broad size-distribution with width from 16 t...

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Bibliographic Details
Main Authors: Biao Geng, Zhenwu Shi, Chen Chen, Wei Zhang, Linyun Yang, Changwei Deng, Xinning Yang, Lili Miao, Changsi Peng
Format: Article
Language:English
Published: SpringerOpen 2021-08-01
Series:Nanoscale Research Letters
Subjects:
Ga-droplet
In-situ pulsed laser
Thermal expansion
Thermal evaporation
Molecular beam epitaxy
Online Access:https://doi.org/10.1186/s11671-021-03583-2

Internet

https://doi.org/10.1186/s11671-021-03583-2

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