Impact of surface treatment on metal-work-function dependence of barrier height of GaN-on-GaN Schottky barrier diode
The impact of surface treatment on Schottky contacts on a GaN-on-GaN epitaxial layer was comprehensively investigated by combining X-ray photoelectron spectroscopy (XPS) at each step of the treatment process and electrical measurements on Schottky barrier diodes. XPS showed that a photolithography p...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5057401 |