Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors
The device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistor prepared by RF-sputtering have been investigated. The engineered active layer devices were composed of an In and Zn rich front layer...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIMS Press
2020-09-01
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| Series: | AIMS Materials Science |
| Subjects: | |
| Online Access: | http://www.aimspress.com/article/doi/10.3934/matersci.2020.5.596?viewType=HTML |