Ultra-Low Power and High-Throughput SRAM Design to Enhance AI Computing Ability in Autonomous Vehicles

Ultra-Low Power and High-Throughput SRAM Design to Enhance AI Computing Ability in Autonomous Vehicles

Power consumption and data processing speed of integrated circuits (ICs) is an increasing concern in many emerging Artificial Intelligence (AI) applications, such as autonomous vehicles and Internet of Things (IoT). Existing state-of-the-art SRAM architectures for AI computing are highly accurate an...

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Bibliographic Details
Main Authors: Youngbae Kim, Shreyash Patel, Heekyung Kim, Nandakishor Yadav, Kyuwon Ken Choi
Format: Article
Language:English
Published: MDPI AG 2021-01-01
Series:Electronics
Subjects:
CNFET (Carbon Nanotube Filed Effect Transistor)
FinFET (Fin Field Effect Transistor)
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low power SRAM
8-T SRAM
CNFET SRAM
Online Access:https://www.mdpi.com/2079-9292/10/3/256

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https://www.mdpi.com/2079-9292/10/3/256

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