In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations

In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations

We report performance of InGaP/GaAs heterojunction bipolar transistors (HBTs) fabricated on epitaxial films directly grown onto 200 mm silicon (Si) substrates using a thin 100% germanium (Ge) buffer layer. Both buffer layer and device layers were grown epitaxially using metalorganic chemical vapor d...

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Bibliographic Details
Main Authors: Yue Wang, Kwang Hong Lee, Wan Khai Loke, Siau Ben Chiah, Xing Zhou, Soon Fatt Yoon, Chuan Seng Tan, Eugene Fitzgerald
Format: Article
Language:English
Published: AIP Publishing LLC 2018-11-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5058717

Internet

http://dx.doi.org/10.1063/1.5058717

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