Optical Gain Characteristics of BGaAs/GaP Quantum Wells

Light emitters integrated with Si platform are highly desirable for photonic integrated circuits, however, manufacturing them remains difficult. In this work, BGaAs/GaP quantum well (QW) structures are proposed as a promising solution of the challenge. These QWs can be grown on GaP/Si templates, whi...

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Bibliographic Details
Main Authors: Herbert S. Maczko, Robert Kudrawiec, Marta Gladysiewicz
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Photonics Journal
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9132657/