Si-Ge whiskers for thermoelectric sensors design

Si-Ge whiskers for thermoelectric sensors design

The paper deals with studies of thermoelectric properties for Si1-xGex (x=0.01-0.05) whiskers doped with boron during their growth by CVD method. Temperature dependences of the resistance and the Seebeck coefficient for Si1-xGex whiskers were measured in the temperature range 275–550 K. A method for...

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Bibliographic Details
Main Authors:	A.A. Druzhinin, I.P. Ostrovskii, Yu.M. Khoverko, N.S. Liakh-Kaguy
Format:	Article
Language:	English
Published:	Vasyl Stefanyk Precarpathian National University 2020-09-01
Series:	Фізика і хімія твердого тіла
Subjects:	si-ge whiskers seebeck coefficient thermal conductivity figure of merit sensor
Online Access:	https://journals.pnu.edu.ua/index.php/pcss/article/view/3872

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