Si-Ge whiskers for thermoelectric sensors design
The paper deals with studies of thermoelectric properties for Si1-xGex (x=0.01-0.05) whiskers doped with boron during their growth by CVD method. Temperature dependences of the resistance and the Seebeck coefficient for Si1-xGex whiskers were measured in the temperature range 275–550 K. A method for...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Vasyl Stefanyk Precarpathian National University
2020-09-01
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| Series: | Фізика і хімія твердого тіла |
| Subjects: | |
| Online Access: | https://journals.pnu.edu.ua/index.php/pcss/article/view/3872 |