A Study on the Transition of Copper Oxide by the Incorporation of Nitrogen

In the present study, the effects of nitrogen incorporation on the transition of a p-type copper oxide semiconductor are investigated. The properties of sputtered copper oxide and nitrogen-incorporated copper oxide are evaluated and compared at various nitrogen gas flow rates. The results indicate t...

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Main Authors:	Song-Yi Ahn, Kyung Park, Daehwan Choi, Jozeph Park, Yong Joo Kim, Hyun-Suk Kim
Format:	Article
Language:	English
Published:	MDPI AG 2019-09-01
Series:	Electronics
Subjects:	nitrogen incorporation cuon p-type oxide semiconductor reactive sputtering thin-film transistors
Online Access:	https://www.mdpi.com/2079-9292/8/10/1099

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spelling	doaj-bfd9caac3a43410d90ef76dec7b3c6a32020-11-25T02:14:01ZengMDPI AGElectronics2079-92922019-09-01810109910.3390/electronics8101099electronics8101099A Study on the Transition of Copper Oxide by the Incorporation of NitrogenSong-Yi Ahn0Kyung Park1Daehwan Choi2Jozeph Park3Yong Joo Kim4Hyun-Suk Kim5Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, KoreaSemiconductor Process Laboratory, WONIK IPS, Gyeonggi-do 17709, KoreaSchool of Integrated Technology, Yonsei University, Incheon 21983, KoreaDepartment of Material Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, KoreaBiosystems Machinery Engineering, Chungnam National University, Daejeon 34134, KoreaDepartment of Materials Science and Engineering, Chungnam National University, Daejeon 34134, KoreaIn the present study, the effects of nitrogen incorporation on the transition of a p-type copper oxide semiconductor are investigated. The properties of sputtered copper oxide and nitrogen-incorporated copper oxide are evaluated and compared at various nitrogen gas flow rates. The results indicate that the addition of nitrogen results in an increased optical bandgap, accompanied by significantly reduced tail states compared to pristine copper oxide. In addition, X-ray diffraction and X-ray photoelectron spectroscopy reveal that the incorporation of nitrogen stimulates the transition from copper (II) oxide to copper (I) oxide.https://www.mdpi.com/2079-9292/8/10/1099nitrogen incorporationcuonp-type oxide semiconductorreactive sputteringthin-film transistors
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Song-Yi Ahn Kyung Park Daehwan Choi Jozeph Park Yong Joo Kim Hyun-Suk Kim
spellingShingle	Song-Yi Ahn Kyung Park Daehwan Choi Jozeph Park Yong Joo Kim Hyun-Suk Kim A Study on the Transition of Copper Oxide by the Incorporation of Nitrogen Electronics nitrogen incorporation cuon p-type oxide semiconductor reactive sputtering thin-film transistors
author_facet	Song-Yi Ahn Kyung Park Daehwan Choi Jozeph Park Yong Joo Kim Hyun-Suk Kim
author_sort	Song-Yi Ahn
title	A Study on the Transition of Copper Oxide by the Incorporation of Nitrogen
title_short	A Study on the Transition of Copper Oxide by the Incorporation of Nitrogen
title_full	A Study on the Transition of Copper Oxide by the Incorporation of Nitrogen
title_fullStr	A Study on the Transition of Copper Oxide by the Incorporation of Nitrogen
title_full_unstemmed	A Study on the Transition of Copper Oxide by the Incorporation of Nitrogen
title_sort	study on the transition of copper oxide by the incorporation of nitrogen
publisher	MDPI AG
series	Electronics
issn	2079-9292
publishDate	2019-09-01
description	In the present study, the effects of nitrogen incorporation on the transition of a p-type copper oxide semiconductor are investigated. The properties of sputtered copper oxide and nitrogen-incorporated copper oxide are evaluated and compared at various nitrogen gas flow rates. The results indicate that the addition of nitrogen results in an increased optical bandgap, accompanied by significantly reduced tail states compared to pristine copper oxide. In addition, X-ray diffraction and X-ray photoelectron spectroscopy reveal that the incorporation of nitrogen stimulates the transition from copper (II) oxide to copper (I) oxide.
topic	nitrogen incorporation cuon p-type oxide semiconductor reactive sputtering thin-film transistors
url	https://www.mdpi.com/2079-9292/8/10/1099
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A Study on the Transition of Copper Oxide by the Incorporation of Nitrogen

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