A Study on the Transition of Copper Oxide by the Incorporation of Nitrogen

A Study on the Transition of Copper Oxide by the Incorporation of Nitrogen

In the present study, the effects of nitrogen incorporation on the transition of a p-type copper oxide semiconductor are investigated. The properties of sputtered copper oxide and nitrogen-incorporated copper oxide are evaluated and compared at various nitrogen gas flow rates. The results indicate t...

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Bibliographic Details
Main Authors: Song-Yi Ahn, Kyung Park, Daehwan Choi, Jozeph Park, Yong Joo Kim, Hyun-Suk Kim
Format: Article
Language:English
Published: MDPI AG 2019-09-01
Series:Electronics
Subjects:
nitrogen incorporation
cuon
p-type oxide semiconductor
reactive sputtering
thin-film transistors
Online Access:https://www.mdpi.com/2079-9292/8/10/1099

Internet

https://www.mdpi.com/2079-9292/8/10/1099

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