Understanding of Polarization-Induced Threshold Voltage Shift in Ferroelectric-Gated Field Effect Transistor for Neuromorphic Applications

Understanding of Polarization-Induced Threshold Voltage Shift in Ferroelectric-Gated Field Effect Transistor for Neuromorphic Applications

A ferroelectric-gated fin-shaped field effect transistor (Fe-FinFET) is fabricated by connecting a Pb(Zr<sub>0.2</sub>Ti<sub>0.8</sub>)O<sub>3</sub>-based ferroelectric capacitor into the gate electrode of FinFET. The ferroelectric capacitor shows coercive voltage...

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Bibliographic Details
Main Authors:	Seungjun Moon, Jaemin Shin, Changhwan Shin
Format:	Article
Language:	English
Published:	MDPI AG 2020-04-01
Series:	Electronics
Subjects:	ferroelectric-gated field-effect-transistor <b>(</b>FeFET), ferroelectric capacitor polarization hysteresis threshold voltage
Online Access:	https://www.mdpi.com/2079-9292/9/5/704

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