Understanding of Polarization-Induced Threshold Voltage Shift in Ferroelectric-Gated Field Effect Transistor for Neuromorphic Applications
A ferroelectric-gated fin-shaped field effect transistor (Fe-FinFET) is fabricated by connecting a Pb(Zr<sub>0.2</sub>Ti<sub>0.8</sub>)O<sub>3</sub>-based ferroelectric capacitor into the gate electrode of FinFET. The ferroelectric capacitor shows coercive voltage...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-04-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/9/5/704 |