Impact of GaAs(100) surface preparation on EQE of AZO/Al2O3/p-GaAs photovoltaic structures

Impact of GaAs(100) surface preparation on EQE of AZO/Al2O3/p-GaAs photovoltaic structures

In order to effectively utilize the photovoltaic properties of gallium arsenide, its surface/interface needs to be properly prepared. In the experiments described here we examined eight different paths of GaAs surface treatment (cleaning, etching, passivation) which resulted in different external qu...

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Bibliographic Details
Main Authors: Piotr Caban, Rafał Pietruszka, Jarosław Kaszewski, Monika Ożga, Bartłomiej S. Witkowski, Krzysztof Kopalko, Piotr Kuźmiuk, Katarzyna Gwóźdź, Ewa Płaczek-Popko, Krystyna Lawniczak-Jablonska, Marek Godlewski
Format: Article
Language:English
Published: Beilstein-Institut 2021-06-01
Series:Beilstein Journal of Nanotechnology
Subjects:
atomic layer deposition
external quantum efficiency
gallium arsenide
photovoltaics
surface passivation
Online Access:https://doi.org/10.3762/bjnano.12.48

Internet

https://doi.org/10.3762/bjnano.12.48

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