The Evolution of Manufacturing Technology for GaN Electronic Devices

The Evolution of Manufacturing Technology for GaN Electronic Devices

GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized product which is fabricated using the conventional Au-...

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Bibliographic Details
Main Authors: An-Chen Liu, Po-Tsung Tu, Catherine Langpoklakpam, Yu-Wen Huang, Ya-Ting Chang, An-Jye Tzou, Lung-Hsing Hsu, Chun-Hsiung Lin, Hao-Chung Kuo, Edward Yi Chang
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Micromachines
Subjects:
gallium nitride
high-electron mobility transistor
CMOS-compatible Au-free process
Online Access:https://www.mdpi.com/2072-666X/12/7/737

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https://www.mdpi.com/2072-666X/12/7/737

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