Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction

Abstract Multilevel data ferroelectric tunnel junction is a breakthrough for further improving the storage density of ferroelectric random access memories. However, the application of these ferroelectric tunnel junctions is limited by high cost of epitaxial perovskite heterostructures, unsatisfactor...

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Bibliographic Details
Main Authors: Pengfei Hou, Jinbin Wang, Xiangli Zhong
Format: Article
Language:English
Published: Nature Publishing Group 2017-07-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-017-04825-z