Interface trap charges associated reliability analysis of Si/Ge heterojunction dopingless TFET
Abstract The interface trap charges (ITC) associated reliability analysis of a charge‐plasma based asymmetric double‐gate (ADG) dopingless tunnel field effect transistor (DLTFET) with Si/Ge heterojunction and high‐κ gate dielectric (HJADGDLTFET) has been studied. The HJADGDLTFET uses silicon at the...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-08-01
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| Series: | IET Circuits, Devices and Systems |
| Online Access: | https://doi.org/10.1049/cds2.12037 |