Simulation of ionic resistivity of ultra-thin passivating films on metals during their galvanostatic transient growth
Differential equations describing the evolution of defect concentrations inside ultra-thin films are developed and numerically resolved for the growth of passivating films under transient galvanostatic conditions. For this, the injection and recombination of defects together with the increase of the...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sociedade Brasileira de Química
2002-01-01
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| Series: | Journal of the Brazilian Chemical Society |
| Subjects: | |
| Online Access: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-50532002000400020 |