Electrical Defect State Distribution in Single Crystal ZnO Schottky Barrier Diodes
The characterization of defect states in a hydrothermally grown single crystal of ZnO was performed using deep-level transient spectroscopy in the temperature range of 77−340 K. The native intrinsic defect energy level within the ZnO band gap occurred in the depletion region of ZnO Schottk...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-02-01
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| Series: | Coatings |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-6412/10/3/206 |