Terahertz Stimulated Emission from Silicon Doped by Hydrogenlike Acceptors
Stimulated emission in the terahertz frequency range has been realized from boron acceptor centers in silicon. Population inversion is achieved at resonant optical excitation on the 1Γ_{8}^{+} → 1Γ_{7}^{−}, 1Γ_{6}^{−}, 4Γ_{8}^{−} intracenter transitions with a midinfrared free-electron laser. Lasing...
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2014-04-01
|
| Series: | Physical Review X |
| Online Access: | http://doi.org/10.1103/PhysRevX.4.021009 |