Plastic deformation in nanostructure silicon formation
The quantity and quality analysis of plastic deformation and near-surface silicon layers with nanostructure silicon formation are given in this paper. It is shown, due to high-temperature oxidation and other factors the complex defect structure is generated in near-surface silicon layers. It consist...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2011-04-01
|
| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2011/1-2_2011/pdf/07.zip |
| Summary: | The quantity and quality analysis of plastic deformation and near-surface silicon layers with nanostructure silicon formation are given in this paper. It is shown, due to high-temperature oxidation and other factors the complex defect structure is generated in near-surface silicon layers. It consists of a disordered silicon layer and a layer of dislocation networks. Silicon dioxide etching and additional chemical treatment allows to obtain nanostructured silicon with given properties. |
|---|---|
| ISSN: | 2225-5818 |