Abnormal threshold voltage shifts in p-channel low temperature polycrystalline silicon TFTs under deep UV irradiation
The electrical properties of p-channel low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) under deep ultraviolet (UV) irradiation were studied. Characteristics including threshold voltage (Vth), hole field effect mobility (μeff) subthreshold swing (SS), and leakage current (...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0060553 |