The design of a DC-30 GHz GaAs pHEMT distributed power amplifier

The design of a DC-30 GHz GaAs pHEMT distributed power amplifier

This paper describes a distributed power amplifier(DA) which was developed using 0.25 μm GaAs pHEMT process. The process of its circuit design and optimization is presented in details. Gain flatness in the low frequency range of this DA has a significant improvement by employing low frequency termin...

Full description

Bibliographic Details
Main Authors: Liu Yanpeng, Wei Qidi, Zhang Guohao
Format: Article
Language:zho
Published: National Computer System Engineering Research Institute of China 2018-10-01
Series:Dianzi Jishu Yingyong
Subjects:
distributed power amplifier
gaas
phemt
Online Access:http://www.chinaaet.com/article/3000092004
id doaj-bcac7f27b7c24e30a4f7a4501ede4358
record_format Article
spelling doaj-bcac7f27b7c24e30a4f7a4501ede43582020-11-25T03:29:29ZzhoNational Computer System Engineering Research Institute of ChinaDianzi Jishu Yingyong0258-79982018-10-014410485110.16157/j.issn.0258-7998.1803493000092004The design of a DC-30 GHz GaAs pHEMT distributed power amplifierLiu Yanpeng0Wei Qidi1Zhang Guohao2School of Information Engineering，Guangdong University of Technology，Guangzhou 510006，ChinaSchool of Information Engineering，Guangdong University of Technology，Guangzhou 510006，ChinaSchool of Information Engineering，Guangdong University of Technology，Guangzhou 510006，ChinaThis paper describes a distributed power amplifier(DA) which was developed using 0.25 μm GaAs pHEMT process. The process of its circuit design and optimization is presented in details. Gain flatness in the low frequency range of this DA has a significant improvement by employing low frequency termination. The simulation result shows that DA which operates between DC and 30 GHz has a gain of 8.5 dB and 21 dBm of output power at 1 dB gain compression and maximum PAE up to 20%.http://www.chinaaet.com/article/3000092004distributed power amplifiergaasphemt
collection DOAJ
language zho
format Article
sources DOAJ
author Liu Yanpeng
Wei Qidi
Zhang Guohao
spellingShingle Liu Yanpeng
Wei Qidi
Zhang Guohao
The design of a DC-30 GHz GaAs pHEMT distributed power amplifier
Dianzi Jishu Yingyong
distributed power amplifier
gaas
phemt
author_facet Liu Yanpeng
Wei Qidi
Zhang Guohao
author_sort Liu Yanpeng
title The design of a DC-30 GHz GaAs pHEMT distributed power amplifier
title_short The design of a DC-30 GHz GaAs pHEMT distributed power amplifier
title_full The design of a DC-30 GHz GaAs pHEMT distributed power amplifier
title_fullStr The design of a DC-30 GHz GaAs pHEMT distributed power amplifier
title_full_unstemmed The design of a DC-30 GHz GaAs pHEMT distributed power amplifier
title_sort design of a dc-30 ghz gaas phemt distributed power amplifier
publisher National Computer System Engineering Research Institute of China
series Dianzi Jishu Yingyong
issn 0258-7998
publishDate 2018-10-01
description This paper describes a distributed power amplifier(DA) which was developed using 0.25 μm GaAs pHEMT process. The process of its circuit design and optimization is presented in details. Gain flatness in the low frequency range of this DA has a significant improvement by employing low frequency termination. The simulation result shows that DA which operates between DC and 30 GHz has a gain of 8.5 dB and 21 dBm of output power at 1 dB gain compression and maximum PAE up to 20%.
topic distributed power amplifier
gaas
phemt
url http://www.chinaaet.com/article/3000092004
work_keys_str_mv AT liuyanpeng thedesignofadc30ghzgaasphemtdistributedpoweramplifier
AT weiqidi thedesignofadc30ghzgaasphemtdistributedpoweramplifier
AT zhangguohao thedesignofadc30ghzgaasphemtdistributedpoweramplifier
AT liuyanpeng designofadc30ghzgaasphemtdistributedpoweramplifier
AT weiqidi designofadc30ghzgaasphemtdistributedpoweramplifier
AT zhangguohao designofadc30ghzgaasphemtdistributedpoweramplifier
_version_ 1724578906005045248

Similar Items