The design of a DC-30 GHz GaAs pHEMT distributed power amplifier
This paper describes a distributed power amplifier(DA) which was developed using 0.25 μm GaAs pHEMT process. The process of its circuit design and optimization is presented in details. Gain flatness in the low frequency range of this DA has a significant improvement by employing low frequency termin...
| Main Authors: | , , |
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| Format: | Article |
| Language: | zho |
| Published: |
National Computer System Engineering Research Institute of China
2018-10-01
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| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000092004 |