Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering
<p>Abstract</p> <p>In this article, we present an investigation of (Ge + SiO<sub>2</sub>)/SiO<sub>2 </sub>multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transm...
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2011-01-01
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Series: | Nanoscale Research Letters |
Online Access: | http://www.nanoscalereslett.com/content/6/1/341 |
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doaj-bba4a6257f1f4e5a9d054360e09a72f42020-11-24T22:20:15ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2011-01-0161341Low-temperature fabrication of layered self-organized Ge clusters by RF-sputteringBarradas NunoAlves EduardoBuljan MajaBernstorff SigridKashtiban RezaBangert UrselPinto SaraRolo AnabelaChahboun AdilGomes Maria<p>Abstract</p> <p>In this article, we present an investigation of (Ge + SiO<sub>2</sub>)/SiO<sub>2 </sub>multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C.</p> http://www.nanoscalereslett.com/content/6/1/341 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Barradas Nuno Alves Eduardo Buljan Maja Bernstorff Sigrid Kashtiban Reza Bangert Ursel Pinto Sara Rolo Anabela Chahboun Adil Gomes Maria |
spellingShingle |
Barradas Nuno Alves Eduardo Buljan Maja Bernstorff Sigrid Kashtiban Reza Bangert Ursel Pinto Sara Rolo Anabela Chahboun Adil Gomes Maria Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering Nanoscale Research Letters |
author_facet |
Barradas Nuno Alves Eduardo Buljan Maja Bernstorff Sigrid Kashtiban Reza Bangert Ursel Pinto Sara Rolo Anabela Chahboun Adil Gomes Maria |
author_sort |
Barradas Nuno |
title |
Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering |
title_short |
Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering |
title_full |
Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering |
title_fullStr |
Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering |
title_full_unstemmed |
Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering |
title_sort |
low-temperature fabrication of layered self-organized ge clusters by rf-sputtering |
publisher |
SpringerOpen |
series |
Nanoscale Research Letters |
issn |
1931-7573 1556-276X |
publishDate |
2011-01-01 |
description |
<p>Abstract</p> <p>In this article, we present an investigation of (Ge + SiO<sub>2</sub>)/SiO<sub>2 </sub>multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C.</p> |
url |
http://www.nanoscalereslett.com/content/6/1/341 |
work_keys_str_mv |
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1725776164813799424 |