Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering
<p>Abstract</p> <p>In this article, we present an investigation of (Ge + SiO<sub>2</sub>)/SiO<sub>2 </sub>multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transm...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2011-01-01
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| Series: | Nanoscale Research Letters |
| Online Access: | http://www.nanoscalereslett.com/content/6/1/341 |
| Summary: | <p>Abstract</p> <p>In this article, we present an investigation of (Ge + SiO<sub>2</sub>)/SiO<sub>2 </sub>multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C.</p> |
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| ISSN: | 1931-7573 1556-276X |