Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques
Heteroepitaxial films of Ga $ _2 $ O $ _3 $ were grown on c-plane sapphire (0001). The stable phase β-Ga $ _2 $ O $ _3 $ was grown using the metalorganic chemical vapor deposition technique, regardless of precursor flow rates, at temperatures between 500 $ ^\circ $ C and 850 $ ^\circ $ C. Metastable...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2018-05-01
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| Series: | Materials Research Letters |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/21663831.2018.1443978 |