Dry Etching Performance and Gas-Phase Parameters of C<sub>6</sub>F<sub>12</sub>O + Ar Plasma in Comparison with CF<sub>4</sub> + Ar

This research work deals with the comparative study of C<sub>6</sub>F<sub>12</sub>O + Ar and CF<sub>4</sub> + Ar gas chemistries in respect to Si and SiO<sub>2</sub> reactive-ion etching processes in a low power regime. Despite uncertain applicability...

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Bibliographic Details
Main Authors: Nomin Lim, Yeon Sik Choi, Alexander Efremov, Kwang-Ho Kwon
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Materials
Subjects:
Online Access:https://www.mdpi.com/1996-1944/14/7/1595