A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics
A quasi-two-dimensional physics-based model of HEMT transistor without using any smoothing functions for joining the linear and saturation regions of current-voltage (I-V) characteristics was developed. Considering the intervalley transitions of electrons and the presence of holes in the channel of...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2019-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2019/5135637 |