The Cryogenic Temperature Behavior of Bipolar, MOS, and DTMOS Transistors in Standard CMOS

The Cryogenic Temperature Behavior of Bipolar, MOS, and DTMOS Transistors in Standard CMOS

Both CMOS bandgap voltage references and temperature sensors rely on the temperature behavior of either CMOS substrate BJTs or MOS transistors in weak inversion. Bipolar transistors are generally preferred over MOS transistors because of their lower spread. However, at deep-cryogenic temperatures, t...

Full description

Bibliographic Details
Main Authors: Harald Homulle, Lin Song, Edoardo Charbon, Fabio Sebastiano
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Characterization
cryogenics
substrate bipolar transistors
CMOS
dynamic-threshold MOS
bandgap references
Online Access:https://ieeexplore.ieee.org/document/8269294/

Internet

https://ieeexplore.ieee.org/document/8269294/

Similar Items