Configuration transitions of divacancies in silicon and germanium
High-resistance samples p-Si (p0 = (1.63 - 7.09)·1011 cm-3) and n-Si (n0 = 1.19·1014 cm-3), grown by the float-ing zone melting after irradiation with fast neutron reactor at 320 C after isothermal and isochronal annealing were studied. The energy levels of divacancy in three charge states, dependi...
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| Format: | Article |
| Language: | English |
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Institute for Nuclear Research, National Academy of Sciences of Ukraine
2013-06-01
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| Series: | Âderna Fìzika ta Energetika |
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| Online Access: | http://jnpae.kinr.kiev.ua/14.2/Articles_PDF/jnpae-2013-14-0163-Dolgolenko.pdf |