A Channel Stress-Profile-Based Compact Model for Threshold Voltage Prediction of Uniaxial Strained HKMG nMOS Transistors
In this paper, a physics-based compact model for the longitudinal and transverse stress profile in the channel of an uniaxially strained bulk MOS transistor is presented. The stress in the channel of a MOS transistor is not uniform and this nonuniform stress distribution results in higher average ch...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7397816/ |