Effect of InGaN thickness on assisted trap recombination and behaviour of InGaN/AlGaN double heterostructure LED
This work is dedicated to the study of InGaN based LED on the thickness variation effect. The operating voltage, total emission rate, efficiency droop and spontaneous recombination rate was improved by increasing the thickness of InGaN layer of InGaN/AlGaN electron blocking layer (EBL). Based on opt...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2017-01-01
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| Series: | EPJ Web of Conferences |
| Online Access: | https://doi.org/10.1051/epjconf/201716201038 |